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Applied Physics Letters

Volumn 83, Issue 4, 2003, Pages 752-754

Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors

(3) Lin, Shih Yen a Tsai, Yao Jen b Lee, Si Chen b

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCURRENTS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

DARK CURRENTS;

INFRARED DETECTORS;

EID: 0041511895 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1594285 Document Type: Article

Times cited : (23)

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