The effect of dopants on the microstructure of polycrystalline silicon thin film grown by MILC method

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 379-383

  Ahn, Ji Su ^a   Yoon, Yeo Geon ^a   Joo, Seung Ki ^a  

^a Seoul National University   (South Korea)

Author keywords

A1. Dopant effect; A1. FE SEM; A3. MILC; A3. Unidirectional parallel growth; B1. a Si; B1. Poly Si

Indexed keywords

CRYSTALLIZATION; FILM GROWTH; POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILMS;

DOPANT EFFECT; FE-SEM; MILC; UNIDIRECTIONAL PARALLEL GROWTH;

DOPING (ADDITIVES);

EID: 33646375215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.060     Document Type: Article

References (11)

1. Lee S.W., and Joo S.K. Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization. IEEE Electron Device Lett. 17 4 (1996) 160
2. Miyasaka M., and Stoemenos J. Excimer laser annealing of amorphous and solid-phase-crystallized silicon films. J. Appl. Phys. 86 10 (1999) 5556
3. Ihn T.H., Kim T.K., Lee B.I., and Joo S.K. A study on the leakage current of poly-Si TFTs fabricated by metal induced lateral crystallization. Microelecron. Reliab. 39 (1999) 53
4. Kim G.-B., Yoon Y.-G., Kim M.-S., Jung H., Lee S.-W., and Joo S.-K. The electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure. IEEE Trans. Electron Device 50 12 (2003) 2344
5. Hayzelden C., and Batstone J.L. Silicide formation and silicide-mediated crystallization of nickel-implanted amorphous silicon thin films. J. Appl. Phys. 73 12 (1993) 8279
6. Jopshi A.R., Krishnamohan T., and Saraswat K. A model for crystal growth during metal induced lateral crystallization of amorphous silicon. J. Appl. Phys. 93 1 (2003) 175
7. Ma T., and Wong M. Dopant and thickness dependence of metal-induced lateral crystallization of amorphous silicon films. J. Appl. Phys. 91 3 (1993) 1236
8. 2/(1 1 1)Si interface. Philos. Mag. A 46 5 (1982) 849
9. Jang J., Oh J.Y., Kim S.K., Choi Y.J., Yoon S.Y., and Kim C.O. Electric-field-enhanced crystallization of amorphous silicon. Nature 395 (1998) 481
10. Sze S.M. Physics of Semiconductor Devices (1981), Wiley, New York
11. Licoppe C., and Nissim Y.I. Impurity-induced enhancement of the growth rate of amorphized silicon during solid-phase epitaxy: a free carrier effect. J. Appl. Phys. 59 2 (1986) 432