Temperature-dependent linewidth of single InP/GaxIn1-xP quantum dots: Interaction with surrounding charge configurations

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 12, 2000, Pages 7382-7387

  Blome, P G ^a   Wenderoth, M ^a   Hubner M ^a   Ulbrich, R G ^a   Porsche, J ^b   Scholz, F ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

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EID: 17044362755     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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32. This system, however, is InP on (GaIn)P, grown by MBE instead of MOVPE, which might lead to a different structure of the WL as well, due to growth kinetics.