Characterization and photoluminescence of AlN:Eu films

Optical Materials

Volumn 28, Issue 8-9, 2006, Pages 1029-1036

  Liu, F S ^a,b   Dong, H W ^a   Liu, Q L ^a   Liang, J K ^a,c   Luo, J ^a   Zhang, Y ^a   Yang, L T ^a   Rao, G H ^a  

^a INSTITUTE OF PHYSICS   (China)

^b SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

AlN:Eu film; Luminescence; Semiconductor

Indexed keywords

ALUMINUM COMPOUNDS; CRYSTALLINE MATERIALS; DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

ALN:EU FILM; CRYSTALLINE FILMS; CRYSTALLINE QUALITY; DOUBLE EXPONENTIAL DECAYS;

OPTICAL FILMS;

EID: 33646201704     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2005.06.001     Document Type: Article

References (28)

1. Steckl J., and Birkhahn R. Appl. Phys. Lett. 73 (1998) 1700
2. Thaik M., Hommerich U., Schwartz R.N., Wilson R.G., and Zavada J.M. Appl. Phys. Lett. 71 (1997) 2641
3. Steckl J., Garter M., Birkhahn R., and Scofield J. Appl. Phys. Lett. 73 (1998) 2450
4. Lozykowski H.J., Jadwisienczak W.M., and Brown I. Appl. Phys. Lett. 74 (1999) 1129
5. Birkhahn R., Garter M., and Steckl A.J. Appl. Phys. Lett. 74 (1999) 2161
6. Heikenfeld J., Garter M., Lee D.S., Birkhahn R., and Steckl A.J. Appl. Phys. Lett. 75 (1999) 1189
7. Lozykowski H.J., Jadwisienczak W.M., and Brown I. Appl. Phys. Lett. 76 (2000) 861
8. Gurumurugan K., Chen H., Harp G.R., Jadwisienczak W.M., and Lozykowski H.J. Appl. Phys. Lett. 74 (1999) 3008
9. Jadwisienczak W.M., Lozykowski H.J., Perjeru F., Chen H., Kordesch M., and Brown I.G. Appl. Phys. Lett. 76 (2000) 3376
10. Liu Q.L., Xu F.F., and Tanaka T. Appl. Phys. Lett. 81 (2002) 3948
11. Kumar, Chan H.L., Weimer J.J., and Sanderson L. Thin Solid Films 308/309 (1997) 406
12. Giardini, Mele A., DiPalma T.M., Flamini C., Orlando S., and Teghil R. Thin Solid Films 295 (1997) 77
13. Tanaka N., Okano H., Usuki T., and Shibata K. Jpn. J. Appl. Phys. 33 (1994) 5249
14. Edgar J.H., Carosella C.A., Eddy C.R., and Smith D.T. J. Mater. Sci. Mater. Electron. 7 (1996) 247
15. Stumm P., and Drabold D.A. Phys. Rev. Lett. 79 (1997) 677
16. lee D.S., Heikenfeld J., Birkhahn R., Garter M., Lee B.K., and Steckl A.J. Appl. Phys. Lett. 76 (2000) 1525
17. Lee D.S., and Steckl A.J. Appl. Phys. Lett. 79 (1999) 1962
18. Jadwisienczak W.M., Lozykowski H.J., Berishev I., Bensaoula A., and Brown I.G. J. Appl. Phys. 89 (2000) 4384
19. Caldwell M.L., Van Patten P.G., Kordesch M.E., and Richardson H.H. MRS Internet J. Nitride Semicond. Res. 6 (2001) 13
20. Cheng H., and Hing P. Surf. Coat. Technol. 167 (2003) 297
21. Halder N.C., and Wanger C.N.J. Adr. X-ray Anal. 9 (1966) 121
22. Gupta R.K., and Anantharaman T.R. Z. Metallkd. 62 (1971) 732
23. Nandi R.K., and Sen Gupta S.P. J. Appl. Cryst. 11 (1978) 6
24. De Keijser T.H., Langford J.I., Mittemeijer E.J., and Vogels A.B.P. J. Appl. Cryst. 15 (1982) 308
25. Klug H.P., and Alexander L.E. X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials. second ed. (1974), John Wiley, New York p. 618
26. Vossen J.L., and O'Neill J.J. RCA Rev. 29 (1968) 566
27. D'Heurle F.M. Metall. Trans. 1 (1970) 725
28. Ismat Shah S. Handbook of Thin Film Process Technology (1995), IOP Publishing Ltd. PP: A3.0:14