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22
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20844449528
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note
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In superlattices involving semiconductors with no common atom, the interface bonding is another source of asymmetry, however, it does not contribute to an in-plane pseudomagnetic field in s110d-oriented quantum wells.
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23
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20844461300
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note
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Recombination time is ∼ 1 ns with and without a bias applied to the quantum wells.
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24
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20844444569
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note
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Although high electron barriers (∼ 2 eV) prevent electron transport in the growth direction for optical excitation above the hole continuum in these type II quantum wells, holes are free to conduct.
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25
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20844449369
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note
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A g-factor of 15 in the InAs quantum well was assumed. The growth direction BIA pseudomagnetic field component is calculated to be 0.5 T, and only depends weakly on applied bias.
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26
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84860943129
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The International Technology Roadmap for Semiconductors, 2003 Edition: Process Integration, Devices and Structures (http://public.itrs.net/)
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