Surface defects and bulk defect migration produced by ion bombardment of Si(001)

Physical Review Letters

Volumn 83, Issue 23, 1999, Pages 4788-4791

  Kyuno, K ^a   Cahill, David G ^a   Averback, R S ^a   Tarus, J ^b   Nordlund, K ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001268548     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.4788     Document Type: Article

References (25)

1. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
2. A. Seeger, Radiat. Eff. 9, 15 (1971).
3. T. Y. Tan and U. Gösele, Appl. Phys. A. 37, 1 (1985).
4. David N. Seidman, Surf. Sci. 70, 532 (1978).
5. G. D. Watkins, J. R. Troxell, and A. P. Chatterjee, in Defects and Radiation Effects in Semiconductors, J. H. Albany, IOP Conf. Proc. No. 46 (Institute of Physics and Physical Society, London, 1979), p. 16.
6. J. C. Brabant, et al., J. Appl. Phys. 47, 4809 (1976).
7. B. Massarani and A. Brelot, in Radiation Damage and Defects in Semiconductors, IOP Conf. Proc. No. 16 (Institute of Physics and Physical Society, London, 1973), p. 269.
8. P. Ehrhart and H. Zillgen, in Defects and Diffusion in Silicon Processing, T. Diaz de la Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, MRS Symposia Proceedings No. 469 (Materials Research Society, Pittsburgh, 1997), vol. 469, p. 175.
9. K. Nordlund, et al., Nucl. Instrum. Methods Phys. Res., Sect. B. 147, 399 (1999).
10. P. Ehrhart and H. Zillgen, J. Appl. Phys. 85, 3503 (1999).
11. J. A. Floro, et al., J. Appl. Phys. 77, 2351 (1995).
12. Peter J. Bedrossian and Tomas Diaz de la Rubia, J. Vac. Sci. Technol. 16, 1043 (1998).
13. Markus Morgenstern, Thomas Michely, and George Comsa, Phys. Rev. Lett. 79, 1305 (1997).
14. P. Pétroff and D. N. Seidman, Appl. Phys. Lett. 18, 518 (1971).
15. H. Eder, et al., Rev. Sci. Instrum. 68, 165 (1997).
16. J. Tarus, et al., Phys. Rev. B. 58, 9907 (1998).
17. K. Nordlund, N. Runeberg, and D. Sundholm, Nucl. Instrum. Methods Phys. Res., Sect. B. 132, 45 (1997).
18. Robert A. Wolkow, Phys. Rev. Lett. 74, 4448 (1995).
19. A. P. Smith and H. Jónsson, Phys. Rev. Lett. 77, 1326 (1996).
20. Peter J. Bedrossian, Phys. Rev. Lett. 74, 3648 (1995).
21. Zhenyu Zhang and H. Metiu, Phys. Rev. B. 48, 8166 (1993).
22. M. D. Johnson, M.-J. Caturla, and T. Diaz de la Rubia, J. Appl. Phys. 84, 1963 (1998).
23. D. R. Lim, C. S. Rafferty, and F. P. Klemens, Appl. Phys. Lett. 67, 2302 (1995).
24. Aditya Agarwal, et al., Appl. Phys. Lett. 70, 3332 (1997).
25. H.-J. Gossmann, et al., Appl. Phys. Lett. 67, 1558 (1995).