Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

Journal of Electroanalytical Chemistry

Volumn 589, Issue 2, 2006, Pages 195-202

  Venkatasamy, Venkatram ^a   Jayaraju, Nagarajan ^a   Cox, Stephen M ^b   Thambidurai, Chandru ^a   Mathe, Mkhulu ^a   Stickney, John L ^a  

^a UNIVERSITY OF GEORGIA   (United States)

^b Department of Astronomy and Physics ^*  (United States)

Author keywords

EC ALE; Ellipsometry; EPMA; EQCM; HgTe; IR detectors; XRD

Indexed keywords

DEPOSITION; ELLIPSOMETRY; EPITAXIAL GROWTH; MONOLAYERS; X RAY DIFFRACTION;

EC-ALE; EPMA; EQCM; HGTE;

ELECTROCHEMISTRY;

EID: 33646145502     PISSN: 15726657     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jelechem.2006.02.006     Document Type: Article

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