Highly enhanced photoluminescence of as-anodized and electrochemically oxidized nanocrystalline p-type porous silicon treated by high-pressure water vapor annealing

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 406-409

  Gelloz, B ^a   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

High pressure; Luminescence; Nanostructures; Silicon

Indexed keywords

ANNEALING; ELECTROCHEMISTRY; INFRARED SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PARAMAGNETIC RESONANCE; SILICON;

HIGH PRESSURE; LOCALIZATION; NON-RADIATIVE RECOMBINATIONS; SI NANOCRYSTALS;

PHOTOLUMINESCENCE;

EID: 33646113378     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.350     Document Type: Article

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