Electroluminescence of heavily doped p-type porous silicon under electrochemical oxidation in Galvanostatic regime

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1055-1061

  Billat, S ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ELECTROLUMINESCENCE; LIGHT EMISSION; LUMINESCENT DEVICES; MORPHOLOGY; PASSIVATION; PHOTOLUMINESCENCE; SUBSTRATES; SURFACES;

CARRIER INJECTION PROCESS; CRYSTALLITES; ELECTROCHEMICAL OXIDATION; GALVANOSTATIC REGIME; QUANTUM SIZES;

POROUS SILICON;

EID: 0030106963     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836581     Document Type: Article

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