Effects of low-temperature annealing on Ohmic contact of Au/p-CdZnTe

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 560, Issue 2, 2006, Pages 409-412

  Wang, Xiaoqin ^a   Jie, Wanqi ^a   Li, Huanyong ^a   Li, Qiang ^a   Wang, Zewen ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Annealing; Doping; Ohmic contact; Tunnel effect

Indexed keywords

ATOMS; CADMIUM; DIFFUSION; DOPING (ADDITIVES); ELECTRON TUNNELING; GOLD; LOW TEMPERATURE EFFECTS; OHMIC CONTACTS; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ACCEPTORS; CDZNTE; DOPING LAYER; SURFACE LAYER;

ANNEALING;

EID: 33646080131     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.12.251     Document Type: Article

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