Study of Gamma-Ray detector performance of Cd1-xZnxTe crystal treated by different etchants

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2859, Issue , 1996, Pages 254-262

  Chen, H ^a   Egarievwe, S U ^a   Hu, Z ^a   Tong, J ^a   Shi, D T ^a   Wu, G H ^a   Chen, K T ^a   George, M A ^a   Collins, W E ^a   Burger, A ^a   James, R B ^b   Stahle, C M ^c   Bartlett, L M ^c  

^a FISK UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

Cd1 xZnxTe; Energy resolution; Leakage current; Radiation detectors fabrication; Surface chemical treatmenmts

Indexed keywords

BROMINE; CADMIUM ALLOYS; ETCHING; ETHYLENE; ETHYLENE GLYCOL; GAMMA RAYS; LACTIC ACID; LEAKAGE CURRENTS; OHMIC CONTACTS; POLYOLS; RADIATION DETECTORS; SEMICONDUCTOR ALLOYS; SURFACE ROUGHNESS; X RAYS;

CD1-XZNXTE; CHEMICAL TREATMENTS; DAMAGED LAYERS; DETECTOR PERFORMANCE; ENERGY RESOLUTIONS; GAMMA RAY DETECTOR; SURFACE CHEMICALS; SURFACE PREPARATION;

ZINC ALLOYS;

EID: 0000984417     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.245128     Document Type: Conference Paper

References (15)

1. J. F. Butler, C L . lingress and F. P. Doty, IEEE Trans. Nucl. Sc., 39 (1992) 605.
2. A. W. Webb, S. B. Quadri, E. R. Carpenter, Jr. and E. F. Skelton, J. Appl. Phys., 61 (1987) 2492.
3. R. B. James, T. E. Schlesinger, J. Lund and M. Schieber, in Seminconductors for Room Temperature Nuclear Detector Applications, Vol. 43, Ch.9, Academic Press, (1995) 335.
4. S. U. Egarievwe, L. Salary, K.-T. Chen and A. Burger, SPIE Annual Meeting, 24-29 July, 1994, San Diego, CA.
5. H. N. Jayatirtha, D. O. Henderson and A. Burger, Appl. Phys. Lett., 62 (6), (1993) 573.
6. I. Hahnert, M. Muhlberg, H. Berger and Ch. Genzel, Journal of Crystal Growth,142 (1994) 310.
7. G. Brandt, H. Ennen, R. Moritz and W. Rothemund, Journal of Crystal Growth, 101 (1990) 226.
8. R. D. Feldman, R. L. Opila and P. M. Bridenbaugh, J. Vac. Sci. Tech., A3(5), (1985) 1988.
9. J. P. Ponpon, Solid State Electronics, Vol. 28, No. 7, (1985) 689.
10. P. M. Amirtharaj and F. H. Pollak, Appl. Phys. Lett., 45 (7), (1984) 789.
11. J. P. Haring, J. G. Werthen and R. H. Bube, J. Vac. Sci. Technol., Al(3), (1983) 1469.
12. M. A. George, M. Azoulay, H. N. Jayatirtha, A. Burger, W. E. Collins and E. Silberman, Surface Science, 296 (1993) 231.
13. M. Azoulay, M. A. George, A. Burger, W. E. Collins and E. Silberman, J. Vac. Sci. Technol., Bl 1(2) (1993) 148.
14. A. Levi, M. Schieber and Z. Burstein, J. Appl. Phys., 54, (1983) 2472.
15. C. B. Davis, D. D. Allred, A. Reyes-Mena. J. Gonalez-Hernadez, O. Gonzalez, B. Hess and W. P. Allred, Physical Review B, V. 47, No. 20 (1993) 13363.