Thermal treatments of CdTe and CdZnTe detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4141, Issue 1, 2000, Pages 303-308

  Chattopadhyay, K ^a   Ma, X ^a   Ndap, J O ^a   Burger, A ^a   Schlesinger, T E ^b   Greaves, M ^b   Glass, H L ^c   Flint, J P ^c   James, R B ^d  

^a FISK UNIVERSITY   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c Honeywell Electronic Materials   (United States)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Annealing treatment; Barrier height; Contact; Gamma ray detector; Interface diffusion

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; GAMMA RAYS; HEAT TREATMENT; INTERFACES (MATERIALS); NUCLEAR RADIATION SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM TELLURIDE;

CADMIUM ZINC TELLURIDE; GAMMA RAY DETECTORS;

PARTICLE DETECTORS;

EID: 0034430286     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.407595     Document Type: Article

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