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Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 624-633
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Present and future of 193 nm lithography
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Author keywords
193 nm lithography; Defects; Immersion; Polarization
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Indexed keywords
CRYSTAL DEFECTS;
CRYSTAL GROWTH;
INTEGRATED CIRCUITS;
MASKS;
POLARIZATION;
SURFACE ROUGHNESS;
193 NM LITHOGRAPHY;
EDGE ROUGHNESS;
IMMERSION;
LITHOGRAPHY;
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EID: 33646037686
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2006.01.250 Document Type: Article |
Times cited : (15)
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References (9)
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