Optimization of ArF resist for 100-nm node: DOE and fine tuning of basic platform

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 168-178

  Kim, Keeho ^a   Wells, Greg ^a   Kim, Won ^a   Choi, Yongjun ^b   Choi, Sejin ^b   Kim, Yangsook ^b   Kim, Deogbae ^b  

^a TEXAS INSTRUMENTS   (United States)

^b Dongjin Semichem Corporation   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ELECTRON BEAMS; ETCHING; MASKS;

BINARY MASKS;

PHOTORESISTS;

EID: 0034768369     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436846     Document Type: Article

References (4)

1. ArF single layer resist composed of alicylic main chain containing maleic anhydride
2. Impact of 2-methyl-2-adamantyl group used for 193 nm single layer resist
3. New single layer positive photoresists for 193 nm photolithography
4. Improved lithographic performance of 193-nm photoresists based on cycloolefin maleic anhydride copolymer by employing mixed PAGs