Supercritical drying process for high aspect-ratio HSQ nano-structures

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 1124-1127

  Wahlbrink, T ^a   Küpper, Daniel ^a   Georgiev, Y M ^a   Bolten, J ^a   Moller M ^a   Küpper, David ^a   Lemme, M C ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

Aspect ratio; High resolution electron beam lithography; HSQ; Supercritical resist drying

Indexed keywords

ASPECT RATIO; DRYING; LITHOGRAPHY; NITROGEN; OPTICAL RESOLVING POWER;

HIGH-RESOLUTION ELECTRON BEAM LITHOGRAPHY; HSQ; SUPERCRITICAL RESIST DRYING;

NANOSTRUCTURED MATERIALS;

EID: 33646024925     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.026     Document Type: Article

References (7)

1. Namatsu H., Yamazaki K., and Kurihara K. Microelectron. Eng. 46 (1999) 129
2. Namatsu H., Yamazaki K., and Kurihara K. J. Vac. Sci. Technol. B 18 (2000) 780
3. Maile B., Henschel W., Kurz H., Rienks B., Polman R., and Kaars P. Jpn. J. Appl. Phys. 39 (2000) 6836
4. Henschel W., Georgiev Y.M., and Kurz H. J. Vac. Sci. Technol. B 21 (2003) 2018
5. SC Fluids, Inc., 472 Amherst Street, Nashua, NH 03063, USA.
6. Wahlbrink T., Mollenhauer T., Georgiev Y.M., Henschel W., Efavi J.K., Gottlob H., Lemme M., Kurz H., Niehusmann J., and Haring Bolivar P. Microelectron. Eng. 78-79 (2005) 212
7. Namatsu H. J. Vac. Sci. Technol. B 19 (2001) 2709