Synthesis and microstructure of Cd4SiS6/Si composite nanowires

Journal of Electron Microscopy

Volumn 54, Issue 6, 2005, Pages 485-491

  Zhan, Jinhua ^a   Bando, Yoshio ^a   Hu, Junqing ^a   Golberg, Dmitri ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Cadmium sulfide; Composite; Nanowires; Semiconductors; Silicon; Thermal evaporation

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NANOWIRES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING TIN COMPOUNDS; SILICON; STACKING FAULTS; THERMAL EVAPORATION; X RAY POWDER DIFFRACTION;

ANISOTROPIC GROWTH; CHEMICAL ANALYSE; CO-THERMAL EVAPORATION; COMPOSITE NANOWIRES; CORE/SHELL COMPOSITE NANOWIRES; METALLIC TIN; SIDE BY SIDES; SIDE SHELL; TIN-PARTICLES; VAPOR-LIQUID-SOLID GROWTH MECHANISM;

CADMIUM SULFIDE;

EID: 33645975856     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfi077     Document Type: Article

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