Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)

Materials Science and Engineering: B

Volumn 75, Issue 2-3, 2000, Pages 170-173

  Lin, C ^a   Zhen, Y L ^a   Li, A Z ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

AlGaAsSb; Compressive strain; InGaAsSb; Photoluminescence; Quantum well

Indexed keywords

EID: 33645808082     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00355-X     Document Type: Article

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