AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2682, Issue , 1996, Pages 216-223

  Garbuzov, Dmitri Z ^a   Lee, Hao ^a   York, Pamela K ^a   Menna, Raymond J ^a   Martinelli, Ramon U ^a   DiMarco, Louis A ^a   Narayan, S Yegna ^a   Capewell, David R ^a   Connolly, John C ^a  

^a SARNOFF CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL FIELDS; VALENCE BANDS;

DOPING (ADDITIVES); HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR LASERS;

EID: 0029718743     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)