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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3284, Issue , 1998, Pages 238-246

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2 μm

(6) Menna, R J a Garbuzov, D Z a Lee, H a Martinelli, R U a Narayan, S Y a Connolly, J C a

a SARNOFF CORPORATION (United States)

Author keywords

2 m wavelength; AlGaAsSb; Broadened waveguide lasers; High power; InGaAsSb; Semiconductor diode lasers

Indexed keywords

CLADDING (COATING); CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BROADBAND-WAVEGUIDE LASERS; MID-INFRARED DIODE LASERS;

QUANTUM WELL LASERS;

EID: 0032225289 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.304450 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.