The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers

IEEE Photonics Technology Letters

Volumn 11, Issue 1, 1999, Pages 30-32

  Newell, T ^a   Wu, X ^a   Gray, A L ^a   Dorato, S ^b   Lee, H ^c   Lester, L F ^d  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d SARNOFF CORPORATION   (United States)

Author keywords

Gallium antimonide; Quantum well devices; Quantum well lasers; Semiconductor lasers

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE MEASUREMENT;

VALENCE BAND OFFSET;

QUANTUM WELL LASERS;

EID: 0032757690     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.736380     Document Type: Article

References (5)

1. 2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm," Appl. Phys. Lett., vol. 72, pp. 876-878, 1998.
2. H. K. Choi and S. J. Eglash, "High-power GaInAsSb-AlGaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm," IEEE Photon. Technol. Lett., vol. 6, pp. 7-9, 1994.
3. T. C. Newell, L. F. Lester, X. Wu, and Y. Zhang, "Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset," Proc. SPIE, vol. 3284, pp. 258-267, 1998.
4. D. Z. Garbuzov, R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, and S. Y. Narayan, "Ultra-low loss broadened waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers," Appl. Phys. Lett., vol. 69, pp. 2006-2008, 1996.
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