Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Journal of Applied Physics

Volumn 99, Issue 6, 2006, Pages

  Li, Yixin ^a   Antonuk, Larry E ^a   El Mohri, Youcef ^a   Zhao, Qihua ^a   Du, Hong ^a   Sawant, Amit ^a   Wang, Yi ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE OXIDE; SUBTHRESHOLD SWING; THERMAL NOISE COEFFICIENTS; X-RAY IRRADIATION;

EXCIMER LASERS; GRAIN BOUNDARIES; IRRADIATION; LEAKAGE CURRENTS; POLYSILICON; THERMAL NOISE; THIN FILM TRANSISTORS;

X RAY ANALYSIS;

EID: 33645783175     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179149     Document Type: Article

References (47)

1. T. Kamins, Polycrystalline Silicon for Integrated Circuits and Displays (Kluwer Academic, Boston, 1998).
2. H. Kuriyama, IEEE Trans. Electron Devices 45, 2483 (1998).
3. R. K. Watts and J. T. C. Lee, IEEE Electron Device Lett. 14, 515 (1993).
4. T. Yamanaka, Tech. Dig. - Int. Electron Devices Meet.. 1988, 48.
5. J. M. Wilson, R. Bashirullah, D. P. Nackashi, D. A. Winick, and P. D. Franzon, Proc. SPIE 5836, 138 (2005).
6. K. Yamamoto, M. Yoshimi, Y. Tawada, Y. Okamoto, A. Nakajima, and S. Igari, Appl. Phys. A: Mater. Sci. Process. 69, 179 (1999).
7. M. G. Clark, IEE Proc.: Circuits Devices Syst. 141, 3 (1994).
8. J. B. Boyce, R. T. Fulks, J. Ho, J. P. Lu, P. Mei, R. A. Street, K. F. van Schuylenbergh, and Y. Wang, Mater. Res. Soc. Symp. Proc. 609, A31.4.1 (2000).
9. S. D. Brotherton, Semicond. Sci. Technol. 10, 721 (1995).
10. L. E. Antonuk, Y. El-Mohri, K.-W. Jee, Q. Zhao, A. Sawant, Z. Su, and R. A. Street, Proc. SPIE 4682, 1 (2002).
11. L. E. Antonuk, in Thin Film Transistors, Materials and Processes: Amorphous Silicon Thin Film Transistors, edited by, Y. Kuo, (Kluwer Academic, Boston, 2004), Vol. 1, pp. 395-484.
12. L. E. Antonuk, Med. Phys. 27, 289 (2000).
13. Y. El-Mohri, Proc. SPIE 5030, 168 (2003).
14. L. E. Antonuk, Proc. SPIE 5745, 18 (2005).
15. K. S. Karim and A. Nathan, IEEE Electron Device Lett. 22, 469 (2001).
16. K. S. Karim, A. Nathan, and J. A. Rowlands, Digest IEDM '02., 2002, p. 215.
17. J. B. Boyce, J. P. Lu, J. Ho, R. A. Street, K. Van Schuylenbergh, and Y. Wang, J. Non-Cryst. Solids 299-302, 731 (2002).
18. J. P. Lu, K. Van Schuylenbergh, J. Ho, Y. Wang, J. B. Boyce, and R. A. Street, Appl. Phys. Lett. 80, 4656 (2002).
19. R. A. Street, J.-P. Lu, and S. R. Ready, IEE Proc.: Circuits Devices Syst. 150, 250 (2003).
20. J. M. Boone, D. E. Pfeiffer, K. J. Strauss, R. P. Rossi, P.-J. P. Lin, J. S. Shepard, and B. J. Conway, Med. Phys. 20, 789 (1993).
21. J. M. Boudry, Thesis, University of Michigan, 1996.
22. W. Zhao, D. Waechter, and J. A. Rowlands, Med. Phys. 25, 527 (1998).
23. M. Chevalier, P. Moran, J. I. Ten, J. M. F. Soto, T. Cepeda, and E. Vano, Med. Phys. 31, 2471 (2004).
24. C. K. Yang, C. L. Lee, T. F. Lei, and H. N. Chern, Appl. Phys. Lett. 67, 3477 (1995).
25. R. A. Street, Technology and Applications of Amorphous Silicon (Springer, New York, 2000).
26. R. A. Street, Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, New York, 1991).
27. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
28. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices 27, 1497 (1980).
29. F. B. McLean, IEEE Trans. Nucl. Sci. 27, 1651 (1980).
30. C. L. Wilson and J. L. Blue, IEEE Trans. Nucl. Sci. 31, 1448 (1984).
31. A. H. Johnston, IEEE Trans. Nucl. Sci. 31, 1427 (1984).
32. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, IEEE Trans. Nucl. Sci. 32, 4363 (1985).
33. R. A. Kjar and D. K. DNichols, IEEE Trans. Nucl. Sci. 22, 2193 (1975).
34. L. E. Antonuk, J. Boudry, W. Huang, D. L. McShan, E. J. Morton, J. Yorkston, M. J. Longo, and R. A. Street, Med. Phys. 19, 1455 (1992).
35. P. J. McWhorter and P. S. Winokur, Appl. Phys. Lett. 48, 133 (1986).
36. K. F. Galloway, C. L. Wilson, and L. C. Witte, IEEE Trans. Nucl. Sci. NS-32, 4461 (1985).
37. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York, 1989).
38. H. E. J. Boesch, F. B. McLean, J. M. Benedetto, and J. M. McGarrity, IEEE Trans. Nucl. Sci. 33, 1191 (1986).
39. F. W. Sexton and J. R. Schwank, IEEE Trans. Nucl. Sci. 32, 3975 (1985).
40. I.-W. Wu, A. G. Lewis, T.-Y. Huang, W. B. Jackson, and A. Chiang, Tech. Dig. - Int. Electron Devices Meet.. 1990, 867.
41. W. B. Jackson, R. J. Nemanich, M. J. Thompson, and B. Wacker, Phys. Rev. B 33, 6936 (1986).
42. J. M. Boudry and L. E. Antonuk, J. Appl. Phys. 76, 2529 (1994).
43. J. Y. W. Seto, J. Appl. Phys. 46, 5247 (1975).
44. G. Baccarani, B. Ricco, and G. Spadini, J. Appl. Phys. 49, 5565 (1978).
45. J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. 53, 1193 (1982).
46. P. V. Evans and S. F. Nelson, J. Appl. Phys. 69, 3605 (1991).
47. H. Ikeda, J. Appl. Phys. 91, 4637 (2002).