Digital radiology using active matrix readout of amorphous selenium: Radiation hardness of cadmium selenide thin film transistors

Medical Physics

Volumn 25, Issue 4, 1998, Pages 527-538

  Zhao, Wei ^a   Waechter, David ^b   Rowlands, J A ^a  

^a SUNNYBROOK RESEARCH INSTITUTE   (Canada)

^b L 3 Communications Electronic Systems Inc Canada   (Canada)

Author keywords

Active matrix readout; Amorphous selenium; Cadmium selenide; Digital radiology; Flat panel imagers; Radiation; Radiation hardness; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; ELECTRON MOBILITY; HARDNESS; HEAT RADIATION; II-VI SEMICONDUCTORS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; RADIATION DAMAGE; RADIOLOGY; SELENIUM COMPOUNDS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SILICON COMPOUNDS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; X RAY DETECTORS; X RAY RADIOGRAPHY;

ACTIVE MATRIXES; AMORPHOUS SELENIUM; CADMIUM SELENIDES; DIGITAL RADIOLOGY; FLAT PANEL IMAGERS; RADIATION HARDNESS;

THIN FILM TRANSISTORS;

CADMIUM; SELENIDE; SELENIUM;

ARTICLE; DIAGNOSTIC IMAGING; DIGITAL RADIOGRAPHY; FLUOROSCOPY; IMAGING SYSTEM; PRIORITY JOURNAL; RADIATION DOSE; RADIATION INJURY; X RAY ANALYSIS; X RAY FILM;

EID: 0031967646     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.598233     Document Type: Article

References (34)

1. W. Zhao and J. A. Rowlands, "A large area solid-state detector for radiology using amorphous selenium," Proc. SPIE 1651, 134-143 (1992).
2. W. Zhao and J. A. Rowlands, "Digital radiology using self-scanned readout of amorphous selenium," Proc. SPIE 1896, 114-120 (1993).
3. J. De Baets, J. Vanfleteren, I. De Rycke, J. Doutreloigne, A. Van Calster, and P. De Visschere, "High-voltage polycrystalline CdSe thin-film transistors," IEEE Trans. Electron Devices 37, 636-639 (1990).
4. D. Waechter, T. Billard, and P. Gogna, "Properties of oxide-nitnde-oxide stacked films for gate insulation in active matrix displays," Mater. Res. Soc. Symp. Proc. 284, 443-448 (1993).
5. T P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits (Wiley, New York: 1989).
6. I. D. French, A. J Snell, P. G. LeComber, and J. H. Stephen, "The effect of γ-irradiation on amorphous silicon field effect transistors," Appl. Phys A: Solids Surf. 31, 19-22 (1983).
7. G. Cho, M. Conti, J. S. Drewery, I. Fujieda, S N. Kaplan, V. Perez-Mendez, S. Qureshi, and R. A. Street, "Assessment of TFT amplifiers for a-Si H pixel particle detectors," IEEE Trans Nucl. Sci. 37, 1142-1148 (1990).
8. J. M. Boudry and L. E. Antonuk, "Radiation damage of amorphous silicon, thin-film, field-effect transistors," Med. Phys. 23, 743-754 (1996).
9. K. H. Zaininger and A. G. Holmes-Siedle, "A survey of radiation effects in metal-insulator-semiconductor devices," RCA Rev. 28, 208-240 (1967).
10. H. E. Boesch, Jr, and F. B. McLean, "Hole transport and trapping in field oxides," IEEE Trans. Nucl. Sci. 32, 3940-3945 (1985).
11. + process," IEEE Trans. Nucl. Sci. 36, 1848-1857 (1989).
12. 60Co and 10 Kev x-ray damage in mos devices," IEEE Trans. Nucl. Sci. 33, 1318-1323 (1986).
13. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, Toronto, 1981), Chaps. 7,8.
14. M. Gaitan and T. J. Russell, "Measurement of radiation-induced interface traps using MOSFETs," IEEE Trans. Nucl. Sci. 31, 1256-1260 (1984).
15. P. J. McWhorter and P S. Winokur, "Simple technique for separating the effects of interface traps and trapped oxide charge in MOS transistors," Appl. Phys Lett. 48, 133-135 (1986).
16. F. W. Sexton and J R. Schwank, "Correlation of radiation effects in transistors and integrated circuits," IEEE Trans. Nucl. Sci. 32, 3975-3981 (1985).
17. K. F. Galloway, M. Gaitan, and T. J. Russell, "A simple model for separating interface and oxide charge effects in MOS device characteristics," IEEE Trans. Nucl. Sci 31, 1497-1501 (1984).
18. W. Zhao and J A. Rowlands, "X-ray imaging using amorphous selenium: Feasibility of a flat panel self-scanned detector for digital radiology," Med. Phys. 22, 1595-1604 (1995).
19. N. C. Das, V. Nathan, R. Tallon, and R. J. Maier, "Radiation effects on gate induced drain leakage current in metal oxide semiconductor transistors," J Appl. Phys. 72, 4958-4962 (1992).
20. A. Acovic, C. C. Hsu, A. Balasinski, and T. P. Ma, "Effects of x-ray irradiation on GIDL in MOSFETs," IEEE Electron Device Lett. 13, 189-191 (1992).
21. "Stopping powers for electrons and positrons," ICRU Report 37 (1984).
22. J. Levinson, F. R. Shepherd, P. J. Scanton, W. D. Westwood, G. Este, and M. Rider, "Conductivity behavior in polycrystalline semiconductor thin film transistors," J. Appl. Phys. 53, 1193-1202 (1982).
23. H. E. Boesch, Jr., F. B. McLean, J. M. Benedetto, J. M. McGarrity, and W. E. Bailey, "Saturation of threshold voltage shift in MOSFET's at high total dose," IEEE Trans. Nucl. Sci. 33, 1191-1197 (1986).
24. J. R Schwank, P. S. Winokur, P J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical mechanisms contributing to device 'rebound,'" IEEE Trans. Nucl. Sci. 31, 1434-1438 (1984).
25. T. R. Oldham, A. J. Lelis, and F. B. McLean, "Spatial dependence of trapped holes determined from tunnelling analysis and measured annealing," IEEE Trans Nucl. Sci. 33, 1203-1209 (1986).
26. A. G. Leiga, "Xerography m medical imaging applications," in Proceedings of the 4th International Symposium on Uses of Selenium and Tellurium (Selenium-Tellurium Development Association, Darien, CT, 1989), pp. 249-266.
27. J. M. Aitken, D. J. DiMaria, and D. R. Young, "Electron injection studies of radiation induced positive charge in MOS devices," IEEE Trans. Nucl. Sci. 23, 1526-1533 (1976).
28. R. C. Hughes, "The origin of interfacial charging in irradiated silicon nitride capacitors," J. Appl. Phys. 56, 1044-1050 (1984).
29. R. C. Hughes and W. R Dawes, Jr., "Dual dielectric silicon metal-oxide-semiconductor field-effect transistor as radiation sensors," J. Appl. Phys. 65, 1972-1976 (1989).
30. T. R. Oldham, F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, "An overview of a radiation-induced interface traps in MOS structures," Semicond. Sci Technol. 4, 986-999 (1989).
31. D. B Brown and N. S. Saks, "Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field," J. Appl. Phys 70, 3734-3747 (1991).
32. 2 MOS structures," IEEE Trans. Nucl. Sci. 27, 1651-1657 (1980).
33. M. P. Baze, R. E. Plaag, and A. H. Johnston, "Dose dependence of interface traps in gate oxides at high levels of total dose," IEEE Trans. Nucl. Sci. 36, 1858-1864.
34. A. C. Adams, "Dielectric and polysilicon film deposition," in VLSI Technology, edited by S. M. Sze (McGraw-Hill, New York, 1988), Chap. 6.