Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 875-883

  Ma, Zhenqiang ^a   Jiang, Ningyue ^a  

^a Wisconsin Electric Machines and Power Electronics Consortium   (United States)

Author keywords

Common base (CB); Doping profile; Figure of merit (FOM); Load pull; Microwave; Power amplification; Power gain; SiGe heterojunction bipolar transistors (HBTs)

Indexed keywords

ELECTRIC BREAKDOWN; MICROWAVE AMPLIFIERS; OPTIMIZATION; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

COMMON-BASE CONFIGURATION; FIGURE-OF-MERIT; MICROWAVE POWER AMPLIFICATION; POWER GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33645735392     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870279     Document Type: Article

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