Nonlanthanoid indium-substituted Bi 4Ti 3O 12 films with large remanent polarization and fatigue endurance

Electrochemical and Solid-State Letters

Volumn 9, Issue 6, 2006, Pages

  Chang, Yi Chun ^a   Kuo, Dong Hau ^a,b  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b ELECTROCHEMICAL SOCIETY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH TITANATE; COERCIVE FIELD; FATIGUE ENDURANCE; NONLANTHANOID INDIUM;

BISMUTH COMPOUNDS; COERCIVE FORCE; FERROELECTRIC THIN FILMS; INDIUM; OXYGEN; STRENGTH OF MATERIALS; TEMPERATURE;

POLARIZATION;

EID: 33645733751     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2188073     Document Type: Article

References (30)

1. C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London), 374, 627 (1995).
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London), 401, 682 (1999).
3. N. Soyama, K. Maki, S. Mori, and K. Ogi, Jpn. J. Appl. Phys., Part 1, 39, 5434 (2000).
4. U. Chon, H. M. Jang, M. G. Kim, and C. H. Chang, Phys. Rev. Lett., 89, 087601 (2002).
5. T. Watanabe, H. Funakubo, K. Saito, T. Suzuki, M. Fujimoto, M. Osada, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett., 81, 1660 (2002).
6. K. T. Kim and C. I. Kim, Mater. Sci. Eng., B, 18, 229 (2005).
7. J. L. Pineda-Flores, E. Chavira, J. Reyes-Gasga, A. M. González, and A. Hunaosta-Tera, J. Eur. Ceram. Soc., 23, 839 (2003).
8. A. Garg and D. C. Agrawal, Mater. Sci. Eng., B, 86, 134 (2001).
9. T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito, and M. Osada, Appl. Phys. Lett., 80, 2746 (2002).
10. E. C. Subbarao, J. Phys. Chem. Solids, 23, 665 (1962).
11. R. E. Newnham, R. W. Wolfe, and J. F. Dorrian, Mater. Res. Bull., 6, 1029 (1971).
12. P. Millan, A. Castro, and J. B. Torrance, Mater. Res. Bull., 28, 117 (1993).
13. T. Rentschler, Mater. Res. Bull., 32, 351 (1997).
14. R. A. Armstrong and R. E. Newnham, Mater. Res. Bull., 7, 1025 (1972).
15. Y. M. Sun, Y. C. Chen, J. Y. Gan, and J. C. Hwang, Appl. Phys. Lett., 81, 3221 (2002).
16. Y. M. Sun, Y. C. Chen, J. Y. Gan, and J. C. Hwang, Jpn. J. Appl. Phys., Part 2, 41, L892 (2002).
17. M. S. Tomar, R. E. Melgarejo, A. Hidalgo, S. B. Mazumder, and R. S. Katiyar, Appl. Phys. Lett., 83, 341 (2003).
18. T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett., 80, 100 (2002).
19. H. N. Lee, D. Hesse, N. Zakharov, and U. Gösele, Science, 296, 2006 (2002).
20. U. Chon, J. S. Shim, and H. M. Jang, Solid State Commun., 129, 465 (2004).
21. U. Chon, K. B. Kim, H. M. Jang, and G. C. Yi, Appl. Phys. Lett., 79, 3137 (2001).
22. K. T. Kim, C. I. Kim, D. H. Kang, and I. W. Shim, Thin Solid Films, 422, 230 (2002).
23. T. Watanabe, H. Funakubo, M. Osada, H. Uchida, and I. Okada, J. Appl. Phys., 98, 024110 (2005).
24. T. Shimura, K. Suzuki, and H. Iwahara, Solid State Ionics, 113-115, 355 (1998).
25. H. Iwahara and T. Takahashi, Denki Kagaku oyobi Kogyo Butsuri Kagaku, 39, 400 (1971).
26. Y. Shimakawa, Y. Kubo, Y. Tauchi, H. Asano, T. Kamiyama, F. Izumi, and Z. Hiroi, Appl. Phys. Lett., 79, 2791 (2001).
27. S. E. Cummins and L. E. Cross, J. Appl. Phys., 39, 2268 (1968).
28. H. N. Al-Shareef, D. Dimos, T. J. Boyle, W. L. Warren, and B. A. Tuttle, Appl. Phys. Lett., 69, 690 (1996).
29. D. Wu, A. Li, H. Ling, T. Yu, Z. Liu, and N. Ming, Appl. Phys. Lett., 76, 2208 (2000).
30. M.-W. Chu, M. Ganne, M. T. Caldes, E. Gautier, and L. Brohan, Phys. Rev. B, 68, 014102 (2003).