Lasing properties of strain-compensated InAs/InGaAsN/GaAsN heterostructures in 1.3-1.55 μm spectral range

Technical Physics Letters

Volumn 32, Issue 3, 2006, Pages 229-231

  Mamutin, V V ^a   Bondarenko, O V ^a   Egorov, A Yu ^a   Kryzhanovskaya, N V ^a   Shernyakov, Yu M ^a   Ustinov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33645682550     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063785006030163     Document Type: Article

References (13)

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