Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures

Semiconductor Science and Technology

Volumn 21, Issue 5, 2006, Pages 681-685

  Ostinelli, O ^a   Almuneau, G ^b   Bachtold W ^a  

^a ETH ZURICH   (Switzerland)

^b LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC EXCITATION; OPTICAL PROPERTIES; PHASE TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

ALGAASSB/INP HETEROSTRUCTURES; EXCITATION INTENSITY; SPATIALLY INDIRECT RECOMBINATION; VALENCE BAND;

HETEROJUNCTIONS;

EID: 33645654784     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/5/020     Document Type: Article

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