SCOPUS 정보 검색 플랫폼

Volumn 286, Issue 2, 2006, Pages 247-254

Highly reflective AlGaAsSb/InP Bragg reflector at 1.55 μm grown by MOVPE

(9) Ostinelli, O a Haiml, M a Grange, R a Almuneau, G b Ebnother M a Gini, E a Muller E a Keller, U a Bachtold W a

Author keywords

A1. Crystal morphology; A1. Low dimensional structures; A3. Metalorganic vapor phase epitaxy; B1. Antimonides; B2. Semiconducting indium phosphide; B3. Heterojunction semiconductor devices

Indexed keywords

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFLECTION; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANTIMONIDES; CRYSTAL MORPHOLOGY; HETEROJUNCTION SEMICONDUCTOR DEVICESHETEROJUNCTION SEMICONDUCTOR DEVICES; LOW-DIMENSIONAL STRUCTURES;

ACOUSTOOPTICAL DEVICES;

EID: 29344470992 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.09.026 Document Type: Article

Times cited : (13)

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