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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 512-522

Band offsets of AlxGa1-xSbAs/InGaAs heterojunctions

(2) Cai, Will Z a Miller, D L a

a The Pennsylvania State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMIONIC EMISSION;

BAND ANGLE ALIGNMENT;

HETEROJUNCTIONS;

EID: 0036505114 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1450591 Document Type: Article

Times cited : (12)

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