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Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 7472-7474

Mn diffusion in the plasma oxidized AlO x insulation layer in the magnetic tunnel junctions

(5) Lee, J H a Yoon, C S a Kim, C K a Yuh, J H b Kim, Y W b

a Hanyang University (South Korea)

b University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-DEPOSITED STATE; HIGH OXYGEN AFFINITY; INSULATION LAYERS; LARGE BEARINGS; MAGNETIC TUNNEL JUNCTION; OXIDATION CONDITIONS; PLASMA OXIDATION; THIN FILM STACKS; TUNNEL BARRIER; TUNNEL BARRIER LAYERS;

AUGER ELECTRON SPECTROSCOPY; MAGNETIC DEVICES; MANGANESE; PLASMAS;

DIFFUSION BARRIERS;

EID: 0037095115 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1447197 Document Type: Article

Times cited : (5)

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