Influence of uniaxial tensile strain on the performance of partially depleted SOI CMOS ring oscillators

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 52-54

  Zhao, Wei ^a   Seabaugh, Alan ^a   Winstead, Brian ^b   Jovanovic, Dejan ^b   Adams, Vance ^b  

^a University of Notre Dame   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

MOSFET; Silicon on insulator (SOI); Stress effects; Tunneling; Uniaxial strain

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

RING OSCILLATORS; STANDBY POWER DISSIPATION; STRESS EFFECTS; UNIAXIAL TENSILE STRAIN;

OSCILLATORS (ELECTRONIC);

EID: 33645530460     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.861022     Document Type: Article

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