Suppression of the photoluminescence quenching effect in self-assembled InAs/GaAs quantum dots

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Baidus, N V ^a,b   Chahboun, A ^a,c   Gomes, M J M ^a   Vasilevskiy, M I ^a   Demina, P B ^b   Uskova, E A ^b   Zvonkov, B N ^b  

^a UNIVERSITY OF MINHO   (Portugal)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; HETEROJUNCTIONS; PHOTOLUMINESCENCE; QUENCHING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

GAAS MATRIX; GROWTH TREATMENTS; PHOTOCARRIERS; TETRACHLOROMETHANE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33645523442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006978     Document Type: Article

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