Structural variants in attempted heteroepitaxial growth of B12As2 on 6H-SiC (0001)

Journal of Materials Research

Volumn 20, Issue 11, 2005, Pages 3004-3010

  Michael, J R ^a   Aselage, T L ^a   Emin, David ^b   Kotula, P G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BACKSCATTERING; BORON COMPOUNDS; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); TRANSMISSION ELECTRON MICROSCOPY;

BONDED COVALENT SEMICONDUCTOR; BORON ATOMS; BORON SUB-ARSENIDE FILMS; ELECTRON BACKSCATTERED DIFFRACTION; HETEROEPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 33645455019     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2005.0367     Document Type: Article

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