Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition

Materials Letters

Volumn 58, Issue 7-8, 2004, Pages 1331-1335

  Vetter, William M ^a   Nagarajan, Rajamani ^b   Edgar, James H ^b   Dudley, Michael ^a  

^a STONY BROOK UNIVERSITY   (United States)

^b Kansas State University   (United States)

Author keywords

Boron arsenide; Epitaxial growth; Semiconductors; Transmission electron microscopy; Triple axis diffractometry; X ray topography

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMMINUTION; DIFFRACTOMETERS; EPITAXIAL GROWTH; HYDRIDES; RADIATION; SEMICONDUCTOR MATERIALS; SYNCHROTRONS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY DIFFRACTION ANALYSIS;

TRIPLE-AXIS DIFFRACTOMETRY; X-RAY TOPOGRAPHY;

BORON COMPOUNDS;

EID: 0942299319     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2003.09.042     Document Type: Article

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