Crystal growth of B12As2 on SiC substrate by CVD method

Journal of Crystal Growth

Volumn 273, Issue 3-4, 2005, Pages 431-438

  Nagarajan, R ^a   Xu, Z ^a   Edgar, J H ^a   Baig, F ^b   Chaudhuri, J ^b   Rek, Z ^c   Payzant, E A ^d   Meyer, H M ^d   Pomeroy, J ^e   Kuball, M ^e  

^a Kansas State University   (United States)

^b Wichita State University   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

A1. Characterization; A2. Crystal growth; A3. Chemical vapor deposition processes

Indexed keywords

ARSENIC; BORON; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

COMPOUND SEMICONDUCTORS; CRYSTALLITES; REACTANTS; ROTATION AXIS;

SILICON CARBIDE;

EID: 10644219507     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.07.068     Document Type: Article

References (28)

1. R.J. Archer, R.Y. Koyama, E.E. Loebner, R.C. Lucas, Phys. Rev. Lett. 12 (1964) 538.
2. C.C. Wang, M. Cardona, A.G. Fisher, RCA Rev. 25 (1964) 195.
3. T. Nishinaga, H. Ogawa, H. Watanabe, T. Arizumi, J. Crystal Growth 13/14 (1970) 346.
4. T.L. Chu, J.M. Jackson, A.F. Hyslop, S.C. Chu, J. Appl. Phys. 42 (1971) 420.
5. Y. Kumashiro, J. Mater. Res. 5 (1990) 2933.
6. J.L. Peret, J. Am. Ceram. Soc. 47 (1964) 44.
7. R.A. Burmese, P.E. Greene, Bull. Am. Phys. Soc. Ser. 10 (1965) 1184.
8. K. Shohno, M. Takigawa, T. Nakada, J. Crystal Growth 24/25 (1974) 193.
9. G.A. Slack, T.F. McNelly, E.A. Taft, J. Phys. Chem. Solids 44 (1983) 1009.
10. Y. Kumashiro, H. Yoshigawa, K. Shirai, Jpn. J. Appl. Phys. 10 (1994) 166.
11. P. Yang, T.L. Aselage, Powder Diffraction 10 (1995) 263.
12. J.A. Perri, S. Laplaca, B. Post, Acta. Crystallogr. 11 (1958) 310.
13. F.V. Williams, R.A. Ruehrwein, J. Am. Chem. Soc. 82 (1959) 1330.
14. M. Hirayama, K. Shohno, Jpn. J. Appl. Phys. 12 (1973) 1960.
15. L.A. Correia, R.C. Van Oort, P.J. Vander Put, Reactivity of Solids 2 (1986) 203.
16. R.H. Wang, D. Zubia, T. O'Neil, D. Emin, T. Aselage, W. Zhang, S.D. Hersee, J. Electron. Mater. 29 (2000) 1304.
17. R. Nagarajan, J.H. Edgar, J. Pomeroy, M. Kuball, T. Aselage, Mater. Res. Soc. Symp. Proc. 764 (2003) C.3.58.1.
18. D. Emin, Phys. Today 40 (1987) 55.
19. T.L. Aselage, D. Emin, US Patent No. 6,479,919, 9 April 2001.
20. W.M. Vetter, R. Nagarajan, J.H. Edgar, M. Dudley, Mater. Lett. 58 (2004) 1331.
21. M. Fatemi, J. Chaudhuri, J. Mittereder, A. Christou, J. Appl. Phys. 73 (1993) 1154.
22. B. Morosin, T.L. Aselage, R.S. Feigelson, Mater. Res. Soc. Symp. Proc. 97 (1987) 145.
23. H.L. Yakel, J. Appl. Crystallogr. 6 (1973) 471.
24. R.R. Reeber, K. Wang, Mater. Res. Soc. Symp. Proc. 622 (2000) T6.35.1.
25. S.K. Gandhi, VLSI Fabrication Principles of Silicon and Gallium Arsenide, second ed, Wiley, New York, 1994, pp. 285-287, 321-325.
26. H. Hubert, B. Devouard, L.A.J. Garvie, Michael O'Keefe, P.R. Buseck, W.T. Petuskey, P.F. McMillan, Nature 391 (1998) 376.
27. T.L. Aselage, D.R. Tallant, D. Emin, Phys. Rev. B. 56 (1997) 3122.
28. R. Nagarajan, J.H. Edgar, D.C. Look, unpublished.