Low insertion loss and switching energy all-optical gate for 40 Gbit/s WDM networks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6180, Issue , 2006, Pages

  Massoubre, D ^a   Dion, J ^a   Landreau, J ^b   Decobert, J ^b   Shen, A ^b   Oudar, J L ^a  

^a UNIV PARIS SUD   (France)

^b ALCATEL THALES III V LAB   (France)

Author keywords

All optical device; Fabry perot micro cavity; Non linear optics; Optical signal processing; Regeneration; Saturable absorber

Indexed keywords

INSERTION LOSSES; OPTICAL SWITCHES; SATURATION (MATERIALS COMPOSITION); SIGNAL PROCESSING; TRANSMISSION LINE THEORY;

FABRY-PEROT MICRO-CAVITY; OPTICAL SIGNAL PROCESSING; REGENERATION; SATURABLE ABSORBER;

WAVELENGTH DIVISION MULTIPLEXING;

EID: 33645388890     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.675742     Document Type: Conference Paper

References (26)

1. O. Leclerc, B. Lavigne, E. Balmefrezol, P. Brindel, L. Pierre, D. Rouvillain, and F. Seguineau, "OpticalRegeneration at 40 Gbit/s and Beyond," J. of Ligthwave Technol. 21(11). pp. 2779-2790, 2003.
2. D. Cotter, J. K. Lucek, and D. D. Marcenec, "Ultra-high-bit-rate networking: From the transcontinental backbone to the desktop," IEEE Comm. Magazine, pp. 90-95, 1997.
3. O. Leclerc, "Optical vs. Electronic in-line Signal Processing in Optical Communication Systems: An Exciting Challenge for Optical Devices," in ECIO'03, 2003.
4. L. Lucek and K. Smith, "All-Optical Signal Regenerator," Opt. Lett 18(15), pp. 1226-1228, 1993.
5. K. E. Stubkjaer, "Semiconductor Optical Amplifier-Based All-Optical Gates for High-Speed Optical Processing," IEEE Journal of Selected Topics on Quatum Electronics 6(6), pp. 1428-1435, 2000.
6. P. S. Cho, D. Mahgerefteh, and J. Goldhar, "All-Optical 2R Regeneration and Wavelength Conversion at 20 Gb/s Using an Electroabsorption Modulator," IEEE Photon. Technol. Lett. 11(12), pp. 1662-1664, 1999.
7. D. Atkinson, W. H. Loh, V. V. Afanasjev, A. B. Grudinin, A. J. Seeds, and D. N. Payne, "Increased Amplifier Spacing in a Soliton System with Quantum-Well Saturable Absorbers arid Spectral Filtering," Opt. Lett. 19(19), pp. 1514-1516, 1994.
8. K. Nonaka, Y. Noguchi, H. Tsuda, and T. Kurokawa. "Digital Signal Regeneration with Side-Injection-Light-Controlled Bistable Laser Diode as a Wavelength Converter," IEEE Photon. Technol. Lett. 7(1), pp. 29-31, 1995.
9. A. Hirano, H. T. Tsuda, K. Hagimoto, R. Takahashi, Y. Kawamura. and H. Iwamura, "10ps Pulse All-Optical Discrimination Using a High-Speed Saturable Absorber Optical Gate," Electron. Lett. 31(9), p. 736, 1995.
10. J. Mangeney, G. Aubin, J. L. Oudar, J. C. Harmand, G. Patriarche, H. Choumane, N. Stelmakh, and J. M. Lourtioz, "All-Optical Discrimination at 1.55 μm Using Ultrafast Saturable Absorber Vertical Cavity Device," Electron. Lett. 36(17), p. 1486, 2000.
11. C. Porzi, A. Isomki, M. Guina, and O. G. Okhotnikov, "Impedance- Detuned High-Contrast Vertical Cavity Semidonductor Switch." in OFC'2005, Anaheim, USA, 2005.
12. O. G. Okhotnikov, T. Jouhti, J. Konttinen, S. Karirinne, and M. Pessa, "1.5 μm Monolithic GaInNAs Semiconductor Saturable-Absorber Mode Locking of an Erbium Fiber Laser," Opt. Lett. 28(5), pp. 364-366, 2002.
13. S. Y. Set, H. Yaguchi, M. Jablonski, Y. Tanaka, Y. Sakakibara. A. Rozhin, M. Tokumoto, H. Kataura, Y. Achiba, and K. Kikuchi, "A Noise Suppressing Saturable Absorber at 1550 nm Based on Carbon Nanotube Technology." in OFC'2003. Atlanta. USA. 2003.
14. J. L. Oudar, R. Kuszelewicz, B. Sfez, J. C. Michel, and R. Plauel. "Prospects for Further Threshold Reduction in Bistable Microresonators, " Opt. Quantum Electron. 24(S193), 1993.
15. R. Takahashi, Y. Kawamura, T. Kagawa, and H. Iwamura, "Ultrafast 1.55 μm photoresponses in low-temperature-grown InGaAs/InAlAs quantum wells," Appl. Phys. Lett. 65(14), pp. 1790-1792, 1994.
16. E. L. Delpon, J. L. Oudar, N. Bouche, R. Raj, A. Shen, N. Stelmakh, and J. M. Lourtioz, "Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells," Appl. Phys. Lett. 72(7), pp. 759-761, 1998.
17. L. Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, and D. A. Thompson, "Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy," Appl. Phys. Lett. 71(11), pp. 1513-1515, 1997.
18. M. Guezo, S. Loualiche, J. Even, A. L. Corre, O. Dehaese, Y. Pellan, and A. Marceaux, "Nonlinear Absorption Temporal Dynamics of Fe-Doped GaInAs/InP Multiple Quantum Wells," Journal of Applied Physics 94(4), p. 2355, 2003.
19. J. Mangeney, J. Lopez, N. Stelmakh, J.-M. Lourtioz, J.-L. Oudar, and H. Bernas, "Subgap optical absorption and recombination center efficiency in bulk GaAs irradiated by light or heavy ions," Appl. Phys. Lett. 70(1), pp. 40-42, 2000.
20. D. Rouvillain, P. Brindel. F. Seguineau, L. Pierre, O. Leclere, H. Choumane, G. Aubin, and J. L. Oudar, "Optical 2R Regenerator Based on Passive Saturable Absorber for 40 Gbit/s WDM Long-Haul Transmissions." Electron. Lett. 38(19), p. 1113, 2002.
21. J. Mangeney, S. Barr, G. Aubin, J. L. Oudar, and O. Leclerc, "System Application of 1.5 μm Ultrafast Saturable Absorber in 10 Gbit/s Long-Haul Transmission," Electron. Lett. 36(20), pp. 1725-1727, 2000.
22. D. Massoubre, J. L. Oudar, H. Choumane, G. Aubin, J. C. Harmand, A. Shen. J. Decobert, J. Landreau, and B. Thdrez, "Low Switching Energy Saturable Absorber Device for 40Gbit/s Networks," in Integrated Photonics Research, San-Francisco, USA, 2004.
23. D. Massoubre, J. L. Oudar, G. Aubin, J. Dion, A. Shen, J. Decobert, N. Lagay, A. O'Hare, Z. Belfqih, M. Gay, L. Bramerie, S. Seve, E. Lecren, and J. C. Simon, "High Speed, High Switching Contrast Quantum Well Saturable Absorber for 160 Gbit/s Operation," in CLEO 2005, Baltimore, USA, 2005.
24. J. Mangeney, H. Choumane, G. Patriarche, G. Leroux, G. Aubin, J. C. Harmand, and J. L. Oudar, "Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers," Appl. Phys. Lett. 79(17), pp. 2722-2724, 2001.
25. C. C. Lee, C. Y. Wang, and G. Matijasevic, "Au-In Bonding Below the Eutectic temperature," IEEE Trans. Comp., Hybrids, Manuf Technol. 16, pp. 311-316, 1993.
26. xAs multiple quantum well structures," Appl. Phys. Lett. 41(8), pp. 679-681, 1982.