High speed, high switching contrast quantum well saturable absorber for 160 Gbit/s operation

2005 Conference on Lasers and Electro-Optics, CLEO

Volumn 3, Issue , 2005, Pages 1593-1595

  Massoubre, D ^a   Oudar, J L ^a   Aubin, G ^a   Dion, J ^a   Shen, A ^b   Lagay, N ^b   Decobert, J ^b   O'Hare, A ^d   Belfqih, Z ^c   Gay, M ^c   Bramerie, L ^c   Feve, S ^c   Leeren, E ^c   Simon, J C ^c  

^a CNRS   (France)

^b ALCATEL THALES III V LAB   (France)

^c UNIVERSITÉ DE RENNES 1   (France)

^d DUBLIN INSTITUTE OF TECHNOLOGY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL SYSTEMS; SWITCHING;

SATURABLE ABSORBER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 30944467116     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cleo.2005.202209     Document Type: Conference Paper

References (4)

1. + ions into bulk GaAs", Electon. Lett., 34, 818 (1998).
2. M. Guezo, S. Loualiche et al, "Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55 μm", Appl. Phys. Lett., 85, 1670 (2003)
3. D. Rouvillain et al, "40 Gbit/s optical 2R regenerator based on passive saturable absorber for WDM long-haul transmissions" Optical fiber communication (OFC 2002) (post-deadline paper), Anaheim, USA (17-22 Mars 2002)
4. J. Mangeney, J-L. Oudar et al, "Ultrafast saturable absorption at 1.55 μm in heavy-ion irradiated quantum well vertical cavity " Appl. Phys. Lett. 76, 1371 (2000)