System application of 1.5 μm ultrafast saturable absorber in 10 Gbit/s long-haul transmission

Electronics Letters

Volumn 36, Issue 20, 2000, Pages 1725-1727

  Mangeney, J ^a   Barre S ^b   Aubin, G ^a   Oudar, J L ^a   Leclerc, O ^b  

^a ORANGE LABS   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAVY IONS; ION BOMBARDMENT; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

SEMICONDUCTOR SATURABLE ABSORBER;

OPTICAL COMMUNICATION;

EID: 0034273595     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001196     Document Type: Article

References (5)

1. AUDOUIN, O., PALLISE, E., and DESURVIRE, E.: 'Use of fast in-line saturable absorbers in wavelength-division-multiplexed soliton systems', IEEE Photonics Technol. Lett., 1998, 10, pp. 828-829
2. HIRANO, A., KOBAYASHI, H., TSUDA, H., TAKAHASHI, R., ASOBE, M., SATO, K., and HAGIMOTO, K.: '10Gbit/s RZ all-optical discrimination using refined saturable absorber optical gate', Electron. Lett., 1998, 34, pp. 198-199
3. STELMAKH, N., MANGENEY, J., ALEXANDROU, A., and PORTNOI, E.L.: 'Intensity-invariant sub-picosecond saturable absorption in heavy-ion irradiated bulk GaAs', Appl. Phys. Lett., 1998, 73, pp. 3715-3717
4. LUGAGNE-DELPON, E., OUDAR, J.L., BOUCHÉ N., RAJ, R., SHEN, A., STELMAKH, N., and LOURTIOZ, J.M.: 'Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells', Appl. Phys. Lett., 1998, 72, pp. 759-761
5. MANGENEY, J., OLIDAR, J.L., HARMAND, J.C., MÉRIADEC, C., PATRIARCHE, G., AUBIN, G., STELMAKH, N., and LOURTIOZ, J.M.: 'Ultrafast saturable absorption at 1.55 μm in heavy-ion irradiated quantum well vertical cavity', Appl. Phys. Lett., 2000, 76, pp. 1371-1373