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Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 125-128

Is the Al solubility limit in SiC temperature dependent or not?

(7) Jacquier, C a Ferro, G a Zielinski, M b Polychroniadis, E K c Andreadou, A c Camassel, J b Monteil, Y a

a UNIVERSITÉ CLAUDE BERNARD LYON 1 (France)

b UNIVERSITÉ MONTPELLIER 2 (France)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

Al doping; Epitaxy; Solubility; Vapour liquid solid

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; TRANSMISSION ELECTRON MICROSCOPY;

AL SOLUBILITY LIMIT; FOREIGN PHASE INCLUSION; SIMS DOPING LEVEL; VLS (VAPOR-LIQUID-SOLID) MECHANISM;

SOLUBILITY;

EID: 33645258287 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/0-87849-963-6.125 Document Type: Conference Paper

Times cited : (3)

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