Luminescence properties of impurity-doped semiconductor nanoparticles

Journal of Luminescence

Volumn 119-120, Issue SPEC. ISS., 2006, Pages 161-166

  Kanemitsu, Yoshihiko ^a   Ishizumi, Atsushi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Excitons; Impurity luminescence; Nanoparticles; Quantum confinement

Indexed keywords

BAND STRUCTURE; CRYSTALS; ELECTRON MOBILITY; HOLE TRAPS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS;

DRIFT; EXCITON TRANSPORT; GRADED BAND GAP; UP-CONVERTER;

ENERGY GAP;

EID: 33645213030     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2005.12.026     Document Type: Conference Paper

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