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Thin Solid Films

Volumn 276, Issue 1-2, 1996, Pages 100-103

Continuously tunable photoluminescence from Si+-implanted and thermally annealed SiO2 films

(5) Fischer, T a Petrova Koch, V a Shcheglov, K b Brandt, M S c Koch, F a

a TECHNICAL UNIVERSITY OF MUNICH (Germany)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

c WALTER SCHOTTKY INSTITUT (Germany)

Author keywords

Ion implantation; Luminescence; Silicon; Silicon dioxide

Indexed keywords

ANNEALING; ION IMPLANTATION; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; SILICA; SILICON; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CONTINUOUSLY TUNABLE PHOTOLUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0030120565 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/0040-6090(95)08112-7 Document Type: Article

Times cited : (42)

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