Testing SBT ferroelectric thin films for non-volatile RAM

Integrated Ferroelectrics

Volumn 60, Issue , 2004, Pages 33-44

  Ramos, P ^a   Jimenez R ^b   Alemany, C ^b   Calzada, M L ^b   Gonzalez A ^b   Alonso, C E ^b   Mendiola, J ^b  

^a UNIVERSITY OF ALCALÁ   (Spain)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

Ferroelectric films; Measurement method; RAM; SBT

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE;

INTEGRATED DEVICE; MEASUREMENT METHOD; MEMORY CELL; STRONTIUM BISMUTH TANTALATE (SBT);

FERROELECTRIC THIN FILMS;

EID: 33645194366     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490441179     Document Type: Article

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