Positron trapping at thermal vacancies in highly As-doped Si

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 189-192

  Pennanen, K ^a   Ranki, V ^a   Saarinen, K ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

Diffusion; Positron annihilation; Silicon; Thermal vacancies

Indexed keywords

ARSENIC; COOLING; DEFECTS; ELECTRON TRAPS; IMPURITIES; POSITRON ANNIHILATION SPECTROSCOPY; QUENCHING; SEMICONDUCTOR DOPING; SILICON;

EQUILIBRIUM TEMPERATURE MEASUREMENTS; POSITRON DETRAPPING; THERMAL VACANCIES; VACANCY-IMPURITY COMPLEXES;

POSITRONS;

EID: 33645154854     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.050     Document Type: Conference Paper

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