Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 893-896

  Arima, Kenta ^a   Shigetoshi, Takushi ^a   Kakiuchi, Hiroaki ^a   Morita, Mizuho ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Intrinsic hydrogenated amorphous Si; Scanning tunneling spectroscopy; Solar cell; Surface photovoltage

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GRAIN BOUNDARIES; IRRADIATION; PASSIVATION; SOLAR CELLS; SURFACE PROPERTIES; SURFACE TOPOGRAPHY; WETTING;

DANGLING BONDS; NANOMETER; SURFACE IMPURITIES; SURFACE PHOTOVOLTAGE;

SILICON WAFERS;

EID: 33645132850     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.223     Document Type: Conference Paper

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