-
3
-
-
0034206620
-
Considerations about nanoelectronic GSI processors
-
J.C. da Costa, J. Hoekstra, M.J. Goossens, C.J.M. Verhoeven, H.M. Van Roermund, and A.H.M. Van Roermund Considerations about nanoelectronic GSI processors Analog Integrated Circuits and Signal Processing 24 2000 59 71
-
(2000)
Analog Integrated Circuits and Signal Processing
, vol.24
, pp. 59-71
-
-
Da Costa, J.C.1
Hoekstra, J.2
Goossens, M.J.3
Verhoeven, C.J.M.4
Van Roermund, H.M.5
Van Roermund, A.H.M.6
-
4
-
-
31744447281
-
Computer architectures for nanoscale devices
-
Semiconductor Industry Association
-
J. Carruthers, D. Hammerstrom, B. Colwell, G. Bourianoff, V. Zhirnov. Computer architectures for nanoscale devices, Technical report, Semiconductor Industry Association, 2003.
-
(2003)
Technical Report
-
-
Carruthers, J.1
Hammerstrom, D.2
Colwell, B.3
Bourianoff, G.4
Zhirnov, V.5
-
5
-
-
0022661686
-
Coulomb blockade of tunneling and coherent oscillations in small tunnel junctions
-
D.V. Averin, and K. Likharev Coulomb blockade of tunneling and coherent oscillations in small tunnel junctions Journal of Low Temperature Physics 62 1986 345 372
-
(1986)
Journal of Low Temperature Physics
, vol.62
, pp. 345-372
-
-
Averin, D.V.1
Likharev, K.2
-
7
-
-
0001630171
-
Observation of single-electron charging effects in small tunnel junctions
-
T.A. Fulton, and D. Dolan Observation of single-electron charging effects in small tunnel junctions Physics Review Letters 59 1987 109 112
-
(1987)
Physics Review Letters
, vol.59
, pp. 109-112
-
-
Fulton, T.A.1
Dolan, D.2
-
8
-
-
0031124931
-
Investigation of offset charge noise in single-electron tunneling devices
-
H. Wolf, F.J. Ahlers, J. Niemeyer, H. Scherer, T. Weimann, A.B. Worin, V.A. Krupenin, S.V. Lotkohov, and E. Presnov Investigation of offset charge noise in single-electron tunneling devices IEEE Transactions on Instrumentation and Measurements 46 1997 303 306
-
(1997)
IEEE Transactions on Instrumentation and Measurements
, vol.46
, pp. 303-306
-
-
Wolf, H.1
Ahlers, F.J.2
Niemeyer, J.3
Scherer, H.4
Weimann, T.5
Worin, A.B.6
Krupenin, V.A.7
Lotkohov, S.V.8
Presnov, E.9
-
10
-
-
0033116184
-
Single-electron devices and their applications
-
K.K. Likharev Single-electron devices and their applications Proceedings of the IEEE 87 1999 606 632
-
(1999)
Proceedings of the IEEE
, vol.87
, pp. 606-632
-
-
Likharev, K.K.1
-
16
-
-
0030273368
-
Dynamics of a winner-take-all neural network
-
Y. Fang, M.A. Cohen, and T.G Kincaid Dynamics of a winner-take-all neural network Neural Networks 9 1997 1141 1154
-
(1997)
Neural Networks
, vol.9
, pp. 1141-1154
-
-
Fang, Y.1
Cohen, M.A.2
Kincaid, T.G.3
-
19
-
-
0033330085
-
A multi-valued Hopfield network device using single-electron circuits
-
T. Yamada, and Y. Amemiya A multi-valued Hopfield network device using single-electron circuits IEICE Transactions on Electronics E82-C 1999 1615 1622
-
(1999)
IEICE Transactions on Electronics
, vol.E82-C
, pp. 1615-1622
-
-
Yamada, T.1
Amemiya, Y.2
-
20
-
-
0035279207
-
Boltzmann machine neural network devices using single-electron tunneling
-
T. Yamada, M. Akazawa, T. Asai, and Y. Amemiya Boltzmann machine neural network devices using single-electron tunneling Nanotechnology 12 2001 60 67
-
(2001)
Nanotechnology
, vol.12
, pp. 60-67
-
-
Yamada, T.1
Akazawa, M.2
Asai, T.3
Amemiya, Y.4
-
24
-
-
0023331258
-
An introdution to computing with neural nets
-
R. Lippmann An introdution to computing with neural nets IEEE ASSP Magazine 4 1987 4 22
-
(1987)
IEEE ASSP Magazine
, vol.4
, pp. 4-22
-
-
Lippmann, R.1
-
26
-
-
0031652117
-
Improvement of operation reliability at room temperature for a single-electron pump
-
K. Yamamura, and Y. Suda Improvement of operation reliability at room temperature for a single-electron pump IEICE Transactions of Electron E81-C 1998 16 20
-
(1998)
IEICE Transactions of Electron
, vol.E81-C
, pp. 16-20
-
-
Yamamura, K.1
Suda, Y.2
-
27
-
-
0029206925
-
Fabrication technique for Si single-electron transistor operating at room temperature
-
Y. Takahashi, M. Nagase, H. Namatsu, K. Kurihara, K. Iwdate, Y. Nakajima, S. Horiguchi, K. Murase, and M. Tabe Fabrication technique for Si single-electron transistor operating at room temperature Electronics Letters 31 1995 136 137
-
(1995)
Electronics Letters
, vol.31
, pp. 136-137
-
-
Takahashi, Y.1
Nagase, M.2
Namatsu, H.3
Kurihara, K.4
Iwdate, K.5
Nakajima, Y.6
Horiguchi, S.7
Murase, K.8
Tabe, M.9
|