Investigation of the offset charge noise in single electron tunneling devices

IEEE Transactions on Instrumentation and Measurement

Volumn 46, Issue 2, 1997, Pages 303-306

  Wolf, Henning ^a   Ahlers, Franz Josef ^a   Niemeyer, J ^a   Scherer, Hansjorg ^a   Weimann, Thomas ^a   Zorin, Alexander B ^a   Krupenin, Vladimir A ^b   Lotkhov, Sergey V ^b   Presnov, Denis E ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Memory cell; Noise correlation; Offset charge noise; Single electron transistor; Single electron trap; Single electron tunneling

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC CURRENT MEASUREMENT; ELECTROMETERS; ELECTRON TUNNELING; SUBSTRATES;

NOISE CORRELATION; OFFSET CHARGE NOISE;

TRANSISTORS;

EID: 0031124931     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/19.571840     Document Type: Article

References (8)

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