Integration and characterization of a self-aligned barrier to Cu diffusion based on copper silicide

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 321-328

  Gosset, Laurent G ^a   Arnal, Vincent ^b   Chhun, Sonarith ^c   Casanova, Nicolas ^b   Mellier, Maxime ^a   Reynard, Jean Philippe ^b   Federspiel, Xavier ^a   Guillaumond, Jean Frédéric ^b   Arnaud, Lucile ^d   Torres, Joaquin ^b  

^a NXP SEMICONDUCTORS   (Netherlands)

^b STMICROELECTRONICS   (France)

^c MOTOROLA INC   (United States)

^d CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COPPER COMPOUNDS; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; SILICON CARBIDE;

COPPER DIFFUSION; DIELECTRIC CAPPING LAYERS; INTER-METAL DIELECTRIC (IMD);

COPPER;

EID: 23844450652     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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