Implications of damascene topography for electroplated copper interconnects

Solid State Technology

Volumn 42, Issue 1-8, 1999, Pages 47-52

  Gross, M E ^a   Lingk, C ^a   Brown, W L ^a   Drese, R ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001782436     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (16)

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5. In the literature, the terms grain growth and recrystallization are often used interchangeably when referring to these phenomena in secondary mode.
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11. T. Ritzdorf, L. Chen, D. Fulton, C. Dundas, in Intl. Interconnect Technol. Conf. Abstracts, pp. 287-289, San Francisco, CA, June 1999.
12. M.E. Gross, et al., MRS. Symp. Proc., 564, Advanced Interconnects and Contacts, ed. D. Edelstein, T. Kikkawa, M. Ozturk, K.-N. Tu, E. Weitzman, Mater. Res. Soc., Pittsburgh, PA, in press, 1999.
13. A. Berger, et al., Prog. Mater. Sci., 32, 1, 1998.
14. C. Lingk, M.E. Gross, W.L. Brown, unpublished results.
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