Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography

Journal of Crystal Growth

Volumn 289, Issue 2, 2006, Pages 489-493

  Ma, Tongda ^a   Tu, Hailing ^a   Hu, Guangyong ^a   Shao, Beiling ^a   Liu, Ansheng ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

A1. Crystal structure; A1. Diffusion; A1. High resolution X ray diffraction; A1. X ray topography; A3. Chemical vapor deposition processes; B1. Germanium silicon alloys

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; GERMANIUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SURFACE TOPOGRAPHY; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

LATTICE SPACING; TRIPLE-AXIS X-RAY DIFFRACTION (TAD); X-RAY TOPOGRAPHY;

HETEROJUNCTIONS;

EID: 33644859437     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.102     Document Type: Article

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