Investigation of strained Si/SiGe-OI heterostructure with high resolution electron microscope

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 9, 2004, Pages 1123-1127

  Ma, Tongda ^a   Tu, Hailing ^a   Shao, Beiling ^a   Chen, Changchun ^b   Huang, Wentao ^b  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

High resolution image; Misfit dislocation; Relaxation mechanism; Strained heterostructure Si SiGe OI

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH RESOLUTION ELECTRON MICROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

CROSS-SECTIONAL MICROSTRUCTURE; MISFIT DISLOCATION; MULTI-LAYER STRUCTURE; RELAXATION MECHANISM; STRAINED HETEROSTRUCTURE SI/SIGE-OI; ULTRA-HIGH VACUUM CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 11444264760     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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