5.3 W cw output power from a master oscillator power amplifier at 1083 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6013, Issue , 2005, Pages

  Sumpf, Bernd ^a   Schwertfeger, Sven ^a   Wiedmann, Jörg ^b   Klehr, Andreas ^a   Dittmar, Frank ^a   Erbert, Götz ^a   Tränkle, Günther ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b Eagleyard Photonics GmbH   (Germany)

Author keywords

DBR laser; Diffraction limited radiation; High power; MOPA; Tapered amplifier

Indexed keywords

DIFFRACTION LIMITED RADIATION; DISTRIBUTED BRAGG REFLECTOR; HIGH-POWER; MASTER-OSCILLATOR POWER-AMPLIFIER SYSTEM; NARROW SPECTRAL LINEWIDTH;

ANTIREFLECTION COATINGS; DIFFRACTION; POWER AMPLIFIERS; RADIATION; SEMICONDUCTOR LASERS; WAVEGUIDES;

OSCILLATORS (ELECTRONIC);

EID: 33644785998     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.630640     Document Type: Conference Paper

References (23)

1. T. R. Gentile, M. E. Hayden, M. J. Barlow, Comparison of metastability-exchange optical pumping sources, J. Opt. Coc. Am. B 20, 2068-2074 (2003)
2. G. Tastevin, S. Grot, E. Courtade, S. Bordais, P.-J. Nacher, A broadband Ytterbium-doped tunable fiber laser for 3He optical pumping at 1083 nm; Appl. Phys. B 78, 145-156 (2004)
3. 3He with a modified diaphragm pump; J. Res. Natl. Inst. Stand, Technol. 106, 709-729 (2001)
4. 3He gas compression system using metastability-exchange optical pumping, Rev. Sci. Instrum. 76, 053503 (2005)
5. J. S. Major Jr., D. F. Welch, Singlemode inGaAs/GaAs distributed Bragg reflector laser diodes operating at 1083 nm, Electronics Letters, 29, 2121-2122 (1993)
6. L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, G. Erbert, 180 mW DBR lasers with first-order grating in GaAs emitting at 1062 nm, Electronics Letters, 36, 534-535 (2000)
7. F. Bugge, A. Knauer, U. Zeimer, J. Sebastian, V. B. Smirnitski, A. Klehr, G. Erbert, M. Weyers, MOVPE grpeoth of tunable DBR laser diode emitting at 1060 nm, J. Cryst. Growth, 195, 676-680 (1998)
8. S. O'Brien, D. Mehuys, J. Major, R. Lang, R. Parke, D. F. Welch, D. Scifres, 1.3 W CW, diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm, Electronics Letters 29, 2109-2110 (1993)
9. R. Parke, D. F. Welch, A. Hardy, R. Lang, D. Mehuys, S. O'Brian, K. Dzurko, D. Scifres, 2.0 W cw, diffraction-limited operation of a monolithically integrated master oscillator power amplifier, IEEE Photonics technology letters 5, 297-300 (1993)
10. S. O'Brien, D. F. Welch, R. A. Parke, D. Mehuys, K. Dzurko, R. J. Lang, R. Waarts, D. Scifres, Operating Characteristics of a high-power monolithically integrated flared amplifier master oscillator power amplifier, IEEE Journal of Quantum Electronics 29, 2052-2057 (1993)
11. M. C. Amann, J. Buus, Tunable Laser Diodes (Artech House, Norwood, 1998)
12. L. Goldberg, D. Mehuys, D. C. Hall, 3.3 W cw diffraction limited broad area semiconductor amplifier, Electronics Letters 28 1082-1084 (1992)
13. J. N. Walpole, E. S. Kintzer, S. R. Chinn, C. A. Wang, L. J. Missaggia, High-power strained-layer InGaAs/AlGaAs tapered traveling wave amplifier, Applied Physics Letters 61, 740-742 (1992)
14. E. S. Kintzer, J. N. Walpole, S. R. Chinn, C. A. Wang, L. J. Missaggia, High-power, strained-layer amplifiers and lasers with tapered gain regions, IEEE Photonics Technology Letters 5, 605- 608 (1993)
15. S. O'Brien, A. Schoenfelder, R. J. Lang, 5 W cw diffraction-limited InGaAs broad-area flared amplifier at 970 nm, IEEE Photonics Technology Letters 9, 1217-1219 (1997)
16. S. Schwertfeger, A. Klehr, G. Erbert, G. Tränkle, Compact hybrid master oscillator power amplifier with 3.1 W cw output power at wavelength around 1061 nm, IEEE Photonics Technology Letters 16, 1268-1270 (2004)
17. K. Paschke, T. Reiche, G. Erbert, R. Güther, J. Fricke, F. Bugge, J. Sebastian, 1.6 W hybrid master oscillator power amplifier with α-DFB-laser as master oscillator at 1057 nm, Electronics Letters 38, 321-322 (2002)
18. A. Knauer, G. Erbert, R. Staske, B. Sumpf, H. Wenzel, M. Weyers, High-power 808-nm lasers with a super-large optical cavity, Semicond. Sci. Technol. 20, 621-624 (2005)
19. B. Sumpf, R. Hülsewede, G. Erbert, C. Dzionk, J. Fricke, A. Knauer, W. Pittroff, P. Kessel, J. Sebastian, H. Wenzel, G. Tränkle, High Brightness 735 nm Tapered Lasers - Optimisation of the Laser Geometry, Optical and Quantum Electronics 35, 521-532 (2003)
20. H. Wenzel, B. Sumpf, G. Erbert, High-brightness diode lasers, Comptes Rendus Physique 4, 649-661 (2003)
21. W. Pittroff, G. Erbert, G. Beister, F. Bugge, A. Klein, A. Knauer, J. Maege, P. Ressel, J. Sebastian, R. Staske, G. Tränkle, Mounting of high power laser diodes on boron nitride heat sinks using an optimised Au/Sn metallurgy, IEEE Transactions on Advanced Packaging 24, 434-441 (2001)
22. R. Hülsewede, J. Sebastian, H. Wenzel, G. Beister, A. Knauer, G. Erbert, Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 urn long optical cavity structures, Optics Communication 192, 69-75 (2001)
23. th Int. Semiconductor Laser Conf, Garmisch Partenkirchen, Germany, 89-90 (2002)